Renesas SH7641 - Manual (Page 987)

Section 25 Electrical Characteristics
Rev. 4.00 Sep. 14, 2005 Page 937 of 982
REJ09B0023-0400
TC1 TC2
Td1 Td2 Td3 Td4
Tr Tc3 Tc4 Tde
t
AD1
t
AD1
t
CSD1
t
AD1
t
AD1
t
AD1 t
AD1
t
RWD1
t
RWD1
t
CSD1
t
AD1
t
AD1
t
AD1
t
AD1
t
RDH2
t
RDS2
CKIO
A25 to A0
CSn
RD/ WR
A12/A11* 1
D31 to D0
t
RASD1
t
RASD1
RASU/L
Row
address
ReadA
command
Read command
Column
address
(1 to 4)
t
CASD1
t
CASD1
CASU/L
t
BSD
t
BSD
(High)
BS
CKE
t
DQMD1 t
DQMD1
DQMxx
t
DACD
t
DACD
DACKn* 2
t
RDH2
t
RDS2
Note: 1. An address pin to be connected to pin A10 of SDRAM.
2. Waveform for DACKn when active low is selected.
Figure 25.25 Synchronous DRAM Burst Read Bus Cycle (Four Read Cycles)
(Auto Precharge, CAS Latency 2, WTRCD = 0 Cycle, WTRP = 1 Cycle)