Renesas SH7641 - Manual (Page 985)

Section 25 Electrical Characteristics
Rev. 4.00 Sep. 14, 2005 Page 935 of 982
REJ09B0023-0400
25.3.7 Synchronous DRAM Timing
Tc1 Tr Tcw Td1 Tde
t
AD1 t
AD1
t
CSD1
t
AD1
t
RWD1
t
RWD1
t
CSD1
t
AD1
t
AD1
t
AD1
t
RDH2
t
RDS2
CKIO
A25 to A0
CSn
RD/ WR
A12/A11* 1
D31 to D0
t
RASD1
t
RASD1
RASU/L
Row
address
ReadA
command
Column address
t
CASD1
t
CASD1
CASU/L
t
BSD
t
BSD
(High)
BS
CKE
t
DQMD1
t
DQMD1
DQMxx
t
DACD
t
DACD
DACKn* 2
Note: 1. An address pin to be connected to pin A10 of SDRAM.
2. Waveform for DACKn when active low is selected.
Figure 25.23 Synchronous DRAM Single Read Bus Cycle
(Auto Precharge, CAS Latency 2, WTRCD = 0 Cycle, WTRP = 0 Cycle)