Renesas SH7641 - Manual (Page 1001)

Section 25 Electrical Characteristics
Rev. 4.00 Sep. 14, 2005 Page 951 of 982
REJ09B0023-0400
Trc Trc Trc Tmw Tde Trr Trr Tpw Tp Trc
t CSD1
t AD1 t AD1 t AD1
PALL REF REF MRS
t RWD1 t RWD1 t RWD1
t CSD1 t CSD1 t CSD1
t RASD1 t RASD1 t RASD1 t RASD1
t AD1 t AD1
t CASD1 t CASD1
(Hi-Z)* 3
t CSD1 t CSD1
t RASD1 t RASD1
t CASD1 t CASD1
t CSD1 t CSD1
t RWD1 t RWD1
t RASD1 t RASD1
t CASD1 t CASD1
CKIO
A25 to A0
CSn
RD/ WR
A12/A11* 1
D31 to D0
RASU/L
CASU/L
BS
CKE
DQMxx
DACKn* 2
Note: 1. An address pin to be connected to pin A10 of SDRAM.
2. Waveform for DACKn when active low is selected.
3. Pins D31 to D16 with weak keeper are retained as weak keepers.
Figure 25.39 Synchronous DRAM Mode Register Write Timing (WTRP = 1 Cycle)