4 initialization sequence, 4 initialization sequence -17 – Motorola ColdFire MCF5281 User Manual
Page 289
Synchronous DRAM Controller Module
Freescale Semiconductor
15-17
Figure 15-9. Self-Refresh Operation
15.2.4
Initialization Sequence
Synchronous DRAMs have a prescribed initialization sequence. The DRAM controller supports this
sequence with the following procedure:
1. SDRAM control signals are reset to idle state. Wait the prescribed period after reset before any
action is taken on the SDRAMs. This is normally around 100 µs.
2. Initialize the DCR, DACR, and DMR in their operational configuration. Do not yet enable
PALL
or
REF
commands.
3. Issue a
PALL
command to the SDRAMs by setting DACR[IP] and accessing a SDRAM location.
Wait the time (determined by t
RP
)
before any other execution.
4. Enable refresh (set DACR[RE]) and wait for at least 8 refreshes to occur.
5. Before issuing the
MRS
command, determine if the DMR mask bits need to be modified to allow
the
MRS
to execute properly
6. Issue the
MRS
command by setting DACR[IMRS] and accessing a location in the SDRAM. Note
that mode register settings are driven on the SDRAM address bus, so care must be taken to change
DMR[BAM] if the mode register configuration does not fall in the address range determined by
the address mask bits. After the mode register is set, DMR mask bits can be restored to their
desired configuration.
SRAS
SCAS
DRAMW
PALL
SDRAM_CS[0] or [1]
SELF
First
SCKE
Possible
ACTV
SELFX
Self-
Refresh
Active
t
RCD
= 2
t
RC
= 6
CLKOUT
(DCR[COC] = 0)
MCF5282 and MCF5216 ColdFire Microcontroller User’s Manual, Rev. 3