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Renesas H8S/2111B User Manual

Page 562

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Rev. 1.00, 05/04, page 528 of 544

Item Symbol

Min.

Typ.

Max.

Unit

Test
Conditions

Wait time after
SWE-bit setting*

1

x 1 —

µs

Wait time after
ESU-bit setting*

1

y 100

µs

Wait time after
E-bit setting*

1

, *

6

z 10

100

ms

Wait time after
E-bit clear*

1

α 10

µs

Wait time after
ESU-bit clear*

1

β 10

µs

Wait time after
EV-bit setting*

1

γ 20

µs

Wait time after
dummy write*

1

ε 2 —

µs

Wait time after
EV-bit clear*

1

η 4 —

µs

Wait time after
SWE-bit clear*

1

θ

100 — — µs

Erase

Maximum erase
count*

1

, *

6

, *

7

N — — 120

times

Notes: 1.

Set the times according to the program/erase algorithms.

2. Programming time per 128 bytes (Shows the total period for which the P-bit in FLMCR1

is set. It does not include the programming verification time.)

3. Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does

not include the erase verification time.)

4. Maximum programming time (t

P

(max))

t

P

(max)

= (wait time after P-bit setting (z1) + (z3))

× 6

+ wait time after P-bit setting (z2)

× ((N) – 6)

5. The maximum number of writes (N) should be set according to the actual set value of

z1, z2 and z3 to allow programming within the maximum programming time (t

P

(max)).

The wait time after P-bit setting (z1, z2, and z3) should be alternated according to the

number of writes (n) as follows:

1

≤ n ≤ 6

z1 = 30µs, z3 = 10µs

7

≤ n ≤ 1000 z2 = 200µs

6. Maximum erase time (t

E

(max))

t

E

(max) = Wait time after E-bit setting (z)

× maximum erase count (N)

7. The maximum number of erases (N) should be set according to the actual set value of z

to allow erasing within the maximum erase time (t

E

(max)).

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