Renesas H8S/2111B - Manual (Page 561)

Rev. 1.00, 05/04, page 527 of 544
22.5 Flash Memory Characteristics
Table 22.12 shows the flash memory characteristics.
Table 22.12 Flash Memory Characteristics
Conditions: V
CC
= 3.0 V to 3.6 V, V
SS
= 0 V, T
a
= –20 to +75°C
Item Symbol Min. Typ. Max. Unit
Test
Condition
Programming time* 1 , * 2 ,* 4 t
P
— 10 200 ms/
128
bytes
Erase time* 1 , * 3 ,* 6 t
E
— 100 1200 ms/
block
Reprogramming count N
WEC
— — 100 times
Wait time after
SWE-bit setting*
1
x 1 — — µs
Wait time after
PSU-bit setting*
1
y 50 — — µs
z1 28 30 32 µs 1
≤ n ≤ 6
z2 198 200 202 µs 7
≤ n ≤ 1000
Wait time after
P-bit setting*
1 , * 4
z3 8 10 12 µs Additional
write
Wait time after
P-bit clear*
1
α 5 — — µs
Wait time after
PSU-bit clear*
1
β 5 —
— µs
Wait time after
PV-bit setting*
1
γ 4 —
— µs
Wait time after
dummy write*
1
ε 2 —
— µs
Wait time after
PV-bit clear*
1
η 2 —
— µs
Wait time after
SWE-bit clear*
1
θ
100 — — µs
Programming
Maximum
programming
count*
1 , * 4 ,* 5
N — — 1000 times