INFICON IC6 Thin Film Deposition Controller - Manual (Page 328)

A - 4
PN
07
4-
50
5-
P1
F
IC6 Operating Manual
90 HfC 12.200 *1.000 hafnium carbide
91 HfN 13.800 *1.000 hafnium nitride
92 HfO
2
9.680 *1.000 hafnium oxide
93 HfSi
2
7.200 *1.000 hafnium silicide
94 Hg 13.460 0.740 mercury
95 Ho 8.800 0.580 holmium
96 Ho
2
O
3
8.410 *1.000 holmium oxide
97 In 7.300 0.841 indium
98 In
2
O
3
7.180 *1.000 indium sesquioxide,
99 In
2
Se
3
5.700 *1.000 indium selenide
100 In
2
Te
3
5.800 *1.000 indium telluride
101 InAs 5.700 *1.000 indium arsenide
102 InP 4.800 *1.000 indium phosphide
103 InSb 5.760 0.769 indium antimonide
104 Ir 22.400 0.129 iridium
105 K 0.860 10.189 potassium
106 KBr 2.750 1.893 potassium bromide
107 KCI 1.980 2.050 potassium chloride
108 KF 2.480 *1.000 potassium fluoride
109 KI 3.128 2.077 potassium iodide
110 La 6.170 0.920 lanthanum
111 La
2
O
3
6.510 *1.000 lanthanum oxide
112 LaB
6
2.610 *1.000 lanthanum boride
113 LaF
3
5.940 *1.000 lanthanum fluoride
114 Li 0.530 5.900 lithium
115 LiBr 3.470 1.230 lithium bromide
116 LiF 2.638 0.778 lithium fluoride
117 LiNbO
3
4.700 0.463 lithium niobate
118 Lu 9.840 *1.000 lutetium
119 Mg 1.740 1.610 magnesium
120 MgAl
2
O
4
3.600 *1.000 magnesium aluminate
121 MgAl
2
O
6
8.000 *1.000 spinel
122 MgF
2
3.180 0.637 magnesium fluoride
123 MgO 3.580 0.411 magnesium oxide
124 Mn 7.200 0.377 manganese
125 MnO 5.390 0.467 manganese oxide
Table A-1 Material table (continued)
Code Formula Density Z-Ratio Material Name