Avago Technologies LSI53C876E - Manual (Page 238)

6-6 Electrical Characteristics
Table 6.12 Bidirectional Signals—GPIO0_FETCH/, GPIO1_MASTER/, GPIO2, GPIO3,
GPIO4
Symbol Parameter Min Max Unit Test Conditions
V
IH
Input high voltage 2.0 V
DD
+0.5 V –
V
IL
Input low voltage V
SS
−
0.5 0.8 V –
V
OH
Output high voltage 2.4 V
DD
V
−
16 mA
V
OL
Output low voltage V
SS
0.4 V 16 mA
I
OZ
3-state leakage
−
200 50
µ
A –
Table 6.13 Bidirectional Signals—MAD[7:0]
Symbol Parameter Min Max Unit Test Conditions
V
IH
Input high voltage 2.0 V
DD
+0.5 V –
V
IH
Input high voltage - external
memory pull-downs 3.85 V
DD
+0.5 V –
V
IL
Input low voltage V
SS
−
0.5 0.8 V –
V
IL
Input low voltage - external
memory pull-downs V
SS
−
0.5 1.35 V –
V
OH
Output high voltage 2.4 V
DD
V
−
4 mA
V
OL
Output low voltage V
SS
0.4 V 4 mA
I
OZ
3-state leakage
−
200 50
µ
A –
Table 6.14 Input Signals—TDI, TMS, TCK
Symbol Parameter Min Max Unit Test Conditions
V
IH
Input high voltage 2.0 V
DD
+0.5 V –
V
IL
Input low voltage V
SS
−
0.5 0.8 V –
I
IN
Input leakage
−
200
−
50
µ
A –