4 sram interface overview, 1 sram timing diagrams and parameters, Figure 6-16 – Intel PXA26X User Manual
Page 241
Intel® PXA26x Processor Family Developer’s Manual
6-51
Memory Controller
6.8.4
SRAM Interface Overview
The processor provides a 16-bit or 32-bit asynchronous SRAM interface that uses the DQM pins
for byte selects on writes. nCS[5:0] select the SRAM bank. nOE is asserted on reads and nWE is
asserted on writes. Address bits MA[25:0] allow up to 64 Mbytes of SRAM per bank to be
addressed.
The timing for a read access is identical to that for a non-burst ROM (see
Timing Diagrams and Parameters” on page 6-48
). The RDF fields in the MSCx registers select the
latency for a read access. The MSCx[RDN] field controls the nWE low time during a write cycle.
MSCx[RRR] is the time from nCS deassertion after a memory access to the start of another
memory access. MSCx[RTx] must be configured to 0b001 to select SRAM.
6.8.4.1
SRAM Timing Diagrams and Parameters
, SRAM reads have the same timing as non-burst ROMs, except
DQM[3:0] are used as byte selects. For all reads, DQM[3:0] are 0b0000. During writes, all 32 data
pins are actively driven by the processor regardless of the state of the individual DQM pins.
Figure 6-16. 32-Bit Non-burst ROM, SRAM, or Flash Read Timing Diagram - Four Data Beats
(MSC0:RDF = 4, MSC0:RRR = 1)
0
1
2
3
00
0000
RDF+1
RRR*2+1
RDF+1
RDF+1
RDF+1
RDF+1
RDF+2
RDF+1
RDF+2
MEMCLK
nCS[0]
MA[25:2]
MA[1:0]
nADV(nSDCAS)
nOE
nWE
RDnWR
MD[31:0]
DQM[3:0]
nCS[1]