Epson S1C33210 - Manual (Page 95)

8 ELECTRICAL CHARACTERISTICS
S1C33210 PRODUCT PART EPSON A-81
DRAM random access cycle (basic cycle)
BCLK
A[23:0]
#RAS
#HCAS/
#LCAS
#RD
D[15:0]
#WE
D[15:0]
RAS1
Data transfer #1 Next data transfer
CAS1 PRE1 (precharge) RAS1' CAS1'
t AD t AD t AD
t CASD2 t CASD1
t RDS
t ACCF
t RACF
t RDH
t RASD2 t RASD1
t RASW
t RDD3 t RDD1
t RDW2
t WRD3 t WRD1
t WRW2
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t WDD1 t WDD2
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t CASW
t CACF
∗ 1
∗
1 t RDH is measured with respect to the first signal change (negation) of either the #RD or the A[23:0] signals.
DRAM fast-page access cycle
BCLK
A[23:0]
#RAS
#HCAS/
#LCAS
#RD
D[15:0]
#WE
D[15:0]
RAS1
Data transfer #1 Data transfer #2 Next data transfer
CAS1 CAS2 PRE1 (precharge) RAS1'
t AD t AD t AD
t RDS
t ACCF
t RACF
t RDH
t RASD2 t RASD1
t
RDD3
t
RDD1
t WRD3 t WRD1
t WDD1 t WDD2 t WDD2
t CACF t ACCF
t RASW
t RDW2
t CASD2 t CASD1
t RDS t RDH
t CASW
t WRW2
∗ 1 ∗ 1
∗
1 t RDH is measured with respect to the first signal change (negation) of either the #RD or the A[23:0] signals.