Dram random access cycle (basic cycle), Dram fast-page access cycle – Epson S1C33210 User Manual
Page 95

8 ELECTRICAL CHARACTERISTICS
S1C33210 PRODUCT PART
EPSON
A-81
DRAM random access cycle (basic cycle)
BCLK
A[23:0]
#RAS
#HCAS/
#LCAS
#RD
D[15:0]
#WE
D[15:0]
RAS1
Data transfer #1
Next data transfer
CAS1
PRE1
(precharge)
RAS1'
CAS1'
t
AD
t
AD
t
AD
t
CASD2
t
CASD1
t
RDS
t
ACCF
t
RACF
t
RDH
t
RASD2
t
RASD1
t
RASW
t
RDD3
t
RDD1
t
RDW2
t
WRD3
t
WRD1
t
WRW2
;;;;;;;;;
;;;;;;;;;
;;;;;;;;;;
;;;;;;;;;;
;;;;;;;
;;;;;;;
;;;;;
;;;;;
t
WDD1
t
WDD2
;;;;;
;;;;;
t
CASW
t
CACF
∗
1
∗
1
t
RDH
is measured with respect to the first signal change (negation) of either the #RD or the A[23:0] signals.
DRAM fast-page access cycle
BCLK
A[23:0]
#RAS
#HCAS/
#LCAS
#RD
D[15:0]
#WE
D[15:0]
RAS1
Data transfer #1
Data transfer #2
Next data transfer
CAS1
CAS2
PRE1
(precharge)
RAS1'
t
AD
t
AD
t
AD
t
RDS
t
ACCF
t
RACF
t
RDH
t
RASD2
t
RASD1
t
RDD3
t
RDD1
t
WRD3
t
WRD1
t
WDD1
t
WDD2
t
WDD2
t
CACF
t
ACCF
t
RASW
t
RDW2
t
CASD2
t
CASD1
t
RDS
t
RDH
t
CASW
t
WRW2
∗
1
∗
1
∗
1
t
RDH
is measured with respect to the first signal change (negation) of either the #RD or the A[23:0] signals.