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Dram random access cycle (basic cycle), Dram fast-page access cycle – Epson S1C33210 User Manual

Page 95

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8 ELECTRICAL CHARACTERISTICS

S1C33210 PRODUCT PART

EPSON

A-81

DRAM random access cycle (basic cycle)

BCLK

A[23:0]

#RAS

#HCAS/
#LCAS

#RD

D[15:0]

#WE

D[15:0]

RAS1

Data transfer #1

Next data transfer

CAS1

PRE1

(precharge)

RAS1'

CAS1'

t

AD

t

AD

t

AD

t

CASD2

t

CASD1

t

RDS

t

ACCF

t

RACF

t

RDH

t

RASD2

t

RASD1

t

RASW

t

RDD3

t

RDD1

t

RDW2

t

WRD3

t

WRD1

t

WRW2

;;;;;;;;;

;;;;;;;;;

;;;;;;;;;;

;;;;;;;;;;

;;;;;;;

;;;;;;;

;;;;;

;;;;;

t

WDD1

t

WDD2

;;;;;

;;;;;

t

CASW

t

CACF

1

1

t

RDH

is measured with respect to the first signal change (negation) of either the #RD or the A[23:0] signals.

DRAM fast-page access cycle

BCLK

A[23:0]

#RAS

#HCAS/
#LCAS

#RD

D[15:0]

#WE

D[15:0]

RAS1

Data transfer #1

Data transfer #2

Next data transfer

CAS1

CAS2

PRE1

(precharge)

RAS1'

t

AD

t

AD

t

AD

t

RDS

t

ACCF

t

RACF

t

RDH

t

RASD2

t

RASD1

t

RDD3

t

RDD1

t

WRD3

t

WRD1

t

WDD1

t

WDD2

t

WDD2

t

CACF

t

ACCF

t

RASW

t

RDW2

t

CASD2

t

CASD1

t

RDS

t

RDH

t

CASW

t

WRW2

1

1

1

t

RDH

is measured with respect to the first signal change (negation) of either the #RD or the A[23:0] signals.