beautypg.com

Dram read/write cycles – Epson S1C33210 User Manual

Page 179

background image

II CORE BLOCK: BCU (Bus Control Unit)

S1C33210 FUNCTION PART

EPSON

B-II-4-27

DRAM Read/Write Cycles

The following shows the basic bus cycles of DRAM.
The DRAM interface does not accept wait cycles inserted via the #WAIT pin.

DRAM random read cycle

Example: RAS: 1 cycle; CAS: 2 cycles; Precharge: 1 cycle

BCLK

A[11:0]

#RASx

#HCAS/
#LCAS

#RD

D[15:0]

;;;;;;;

;;;;;;;

;;;;;;;;;;;;;

;;;;;;;;;;;;;

;;;;

;;;;

ROW

COL

data

RAS cycle

CAS cycle

Precharge

cycle

Figure 4.29 DRAM Random Read Cycle

DRAM read cycle (fast page mode)

Example: RAS: 1 cycle; CAS: 2 cycles; Precharge: 1 cycle

BCLK

A[11:0]

#RASx

#HCAS/
#LCAS

#RD

D[15:0]

;;;;;;;

;;;;;;;

;;;;;;;;;;;;;

;;;;;;;;;;;;;

;;;;;;;;;

;;;;;;;;;

ROW

COL #1

COL #2

data

;;;;

;;;;

data

RAS cycle

CAS cycle #1

CAS cycle #2

Precharge

cycle

Figure 4.30 DRAM Read Cycle (fast page mode)

DRAM read cycle (EDO page mode)

Example: RAS: 1 cycle; CAS: 2 cycles; Precharge: 1 cycle

BCLK

A[11:0]

#RASx

#HCAS/
#LCAS

#RD

D[15:0]

;;;;;;;

;;;;;;;

;;;;;;;;;;;;;;;;

;;;;;;;;;;;;;;;;

;;;;;;;;;

;;;;;;;;;

ROW

COL #1

COL #2

data

;;

;;

data

RAS cycle

CAS cycle #1

CAS cycle #2

Precharge

cycle

Figure 4.31 DRAM Read Cycle (EDO page mode)

The read timing in EDO page-mode lags 0.5 cycles behind that in fast page mode.