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Common characteristics, Sram read cycle, Sram write cycle – Epson S1C33210 User Manual

Page 90

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8 ELECTRICAL CHARACTERISTICS

A-76

EPSON

S1C33210 PRODUCT PART

Common characteristics

(Unless otherwise specified: V

DD

=2.7V to 3.6V, V

SS

=0V, Ta=-40

°

C to +85

°

C)

Item

Symbol

Min.

Max.

Unit

Address delay time

t

AD

10

ns

1

#CEx delay time (1)

t

CE1

10

ns

#CEx delay time (2)

t

CE2

10

ns

Wait setup time

t

WTS

17

ns

Wait hold time

t

WTH

0

ns

Read signal delay time (1)

t

RDD1

10

ns

2

Read data setup time

t

RDS

15

ns

Read data hold time

t

RDH

0

ns

Write signal delay time (1)

t

WRD1

10

ns

3

Write data delay time (1)

t

WDD1

10

ns

Write data delay time (2)

t

WDD2

0

10

ns

Write data hold time

t

WDH

0

ns

note 1) This applies to the #BSH and #BSL timings.

2) This applies to the #GAAS and #GARD timings.
3) This applies to the #GAAS timing.

SRAM read cycle

(Unless otherwise specified: V

DD

=2.7V to 3.6V, V

SS

=0V, Ta=-40

°

C to +85

°

C)

Item

Symbol

Min.

Max.

Unit

Read signal delay time (2)

t

RDD2

10

ns

Read signal pulse width

t

RDW

t

CYC

(0.5+WC)-10

ns

Read address access time (1)

t

ACC1

t

CYC

(1+WC)-25

ns

Chip enable access time (1)

t

CEAC1

t

CYC

(1+WC)-25

ns

Read signal access time (1)

t

RDAC1

t

CYC

(0.5+WC)-25

ns

SRAM write cycle

(Unless otherwise specified: V

DD

=2.7V to 3.6V, V

SS

=0V, Ta=-40

°

C to +85

°

C)

Item

Symbol

Min.

Max.

Unit

Write signal delay time (2)

t

WRD2

10

ns

Write signal pulse width

t

WRW

t

CYC

(1+WC)-10

ns