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A.1 dram (70ns), Dram interface setup examples – 70ns, Dram interface timing – 70ns – Epson S1C33210 User Manual

Page 107

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APPENDIX A EXTERNAL DEVICE INTERFACE TIMINGS

S1C33210 PRODUCT PART

EPSON

A-93

A.1 DRAM (70ns)

DRAM interface setup examples – 70ns

Operating
frequency

RAS precharge

cycle

RAS cycle

CAS cycle

Refresh RAS pulse

width

Refresh RPC delay

20MHz

2

1

2

2

1

25MHz

2

1

2

2

1

33MHz

2

2

3

3

1

DRAM interface timing – 70ns

DRAM interface

Unit: ns

33MHz

25MHz

20MHz

Parameter

Symbol

Min.

Max.

Cycle

Time

Cycle

Time

Cycle

Time

Random read/random write cycle time

t

RC

130

7

210

5

200

5

250

#RAS precharge time

t

RP

50

2

60

2

80

2

100

#RAS pulse width

t

RAS

70

10000

5

150

3

120

3

150

#CAS pulse width

t

CAS

20

10000

2.5

75

1.5

60

1.5

75

Row address setup time

t

ASR

0

0.5

15

0.5

20

0.5

25

Row address hold time

t

RAH

10

1.5

45

0.5

20

0.5

25

Column address setup time

t

ASC

0

0.5

15

0.5

20

0.5

25

#RAS

#CAS delay time

t

RCD

20

2.0

60

1.0

40

1.0

50

#RAS

column address delay time

t

RAD

15

1.5

45

0.5

20

0.5

25

#RAS access time

t

RAC

70

4.5

135

2.5

100

2.5

125

#CAS access time

t

CAC

20

2.5

75

1.5

60

1.5

75

Address access time

t

AA

35

3.0

90

2.0

80

2.0

100

#OE access time

t

OAC

20

4.5

135

2.5

100

2.5

125

Output buffer turn-off time

t

OFF

0

20

2

60

2

80

2

100

Data input hold time

t

DH

15

2.5

75

1.5

60

1.5

75

Fast-page mode cycle time

t

PC

45

3.0

90

2.0

80

2.0

100

Fast-page mode #CAS precharge time

t

CP

10

0.5

15

0.5

20

0.5

25

Access time after #CAS precharge

t

ACP

40

3.0

90

2.0

80

2.0

100

#CAS setup time

t

CSR

10

1.0

30

1.0

40

1.0

50

#CAS hold time

t

CHR

10

2.5

75

1.5

60

1.5

75

#RAS precharge

#CAS hold time

t

PPC

10

1.0

30

1.0

40

1.0

50

#RAS pulse width (only in refresh cycle)

t

RAS

70

10000

3.0

90

2.0

80

2.0

100