3 dc characteristics – Epson S1C33210 User Manual
Page 84
8 ELECTRICAL CHARACTERISTICS
A-70
EPSON
S1C33210 PRODUCT PART
8.3 DC Characteristics
(Unless otherwise specified: V
DD
=2.7V to 3.6V, Ta=-40
°
C to +85
°
C)
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
∗
Input leakage current
I
LI
-1
–
1
µ
A
Off-state leakage current
I
OZ
-1
–
1
µ
A
High-level output voltage
V
OH
I
OH
=-2mA (Type1), I
OH
=-6mA (Type2),
I
OH
=-12mA (Type3), V
DD
=Min.
V
DD
-0.4
–
–
V
Low-level output voltage
V
OL
I
OL
=2mA (Type1), I
OL
=6mA (Type2),
I
OL
=12mA (Type3), V
DD
=Min.
–
–
0.4
V
High-level input voltage
V
IH
CMOS level, V
DD
=Max.
2.4
–
–
V
Low-level input voltage
V
IL
CMOS level, V
DD
=Min.
–
–
0.4
V
Positive trigger input voltage
V
T+
LVTTL schmitt
1.1
–
2.4
V
Negative trigger input voltage
V
T-
LVTTL schmitt
0.6
–
1.8
V
Hysteresis voltage
V
H
LVTTL schmitt
0.1
–
–
V
Pull-up resistor
R
PU
V
I
=0V
Other than DSIO
80
200
480
k
Ω
DSIO
40
100
240
k
Ω
Pull-down resistor
R
PD
V
I
=V
DD
(TST)
40
100
240
k
Ω
Input pin capacitance
C
I
f=1MHz, V
DD
=0V
–
–
10
pF
Output pin capacitance
C
O
f=1MHz, V
DD
=0V
–
–
10
pF
I/O pin capacitance
C
IO
f=1MHz, V
DD
=0V
–
–
10
pF
Note: See Appendix B for pin characteristics.