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Dram burst-of-eight transactions -17 – Intel STRONGARM SA-1100 User Manual

Page 131

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SA-1100 Developer’s Manual

10-17

Memory and PCMCIA Control Module

Figure 10-4

shows the rate of the shift registers during DRAM nCAS timing for burst-of-eight

transactions.

Figure 10-4. DRAM Burst-of-Eight Transactions

A4778-01

Memory Clock

ADDR

Input Data

Latch Input Data (internal):

Reads:

TRP

nRAS

nOE

Writes:

Write Data

nWE

nCAS

COL

D0

D1

D2

D3

D4

D5

D6

D7

COL+4 COL+8 COL+12 COL+16 COL+20 COL+24

COL+28

D0

D1

D2

D3

D4

D5

D6

D7

ROW

Contents of DRAM register fields:

MDCAS1 = 11 0001 1000 1100 (binary) MDCAS0 = 0110 0011 0001 1000 1100 0110 0000 0111 (binary)

first

last

time

MDCNFG:TRP = 4 MDCNFG:CDB2 = 1 TDL = 00

Contents of DRAM register fields:

MDCNFG:TRP=4

MDCAS0= 0110 0011 0001 1000 1100 0110 0000 0111(binary)

MDCAS1=11 0001 1000 1100(binary)

MDCNFG:CDB2=1 TDL=00

time

first

last