Intel STRONGARM SA-1100 - Manual (Page 122)

10-8 SA-1100 Developer’s Manual
Memory and PCMCIA Control Module
31..17 DRI<14:0> DRAM refresh interval.
The number of memory clock cycles (divided by 4) between CAS before RAS (CBR)
refresh cycles. One row is refreshed in each DRAM bank during each CBR refresh
cycle.
The value that must be loaded into this register is calculated as follows:
DRI = Number of cycles/4 = ((Refresh time / rows) - (longest burst access time)) x
Mem clock frequency /4.
The longest burst access time to subtract must also take into consideration access to
ROM or Flash EPROM. (These may be interrupted to service a DRAM refresh cycle
after each 32-bit word. If there is a read on a 16-bit bus, a refresh cycle may be
inserted after 2 read cycles. If there is a read to a 32-bit bus, the refresh waits one
read cycle to be serviced. The DRAM interface inserts CBR refresh cycles between
bursts of up to 8 words. Because the address pins are ignored by the DRAMs during
CBR refresh cycles, PCMCIA transactions may be ongoing during a refresh cycle and
will not be interrupted.)
Bit Name Description