5 an example of accessing nand flash of slc type – Toshiba H1 Series User Manual
Page 260
TMP92CZ26A
92CZ26A-257
3.11.5 An Example of Accessing NAND Flash of SLC Type
1. Initialization
;
; ***** Initialize NDFC *****
;
Conditions: 8-bit bus, CE0, SLC, 512 (528) bytes/page, Hamming codes
;
ld
(ndfmcr1),0001h ; 8-bit bus, Hamming ECC, SYSCK-ON
ld
(ndfmcr0),2000h ; SPLW1:0=0, SPHW1:0=2
2. Write
Writing valid data
; ***** Write valid data*****
;
ldw
(ndfmcr0),2010h ; CE0 enable
ldw
(ndfmcr0),20B0h ; WE enable, CLE enable
ld
(ndfdtr0),80h
; Serial input command
ldw
(ndfmcr0),20D0h
;
ALE
enable
ld
(ndfdtr0),xxh
; Address write (3 or 4 times)
ldw
(ndfmcr0),2095h ; Reset ECC, ECCE enable, CE0 enable
ld
(ndfdtr0),xxh
; Data write (512 times)
Generating ECC Reading ECC
; ***** Read ECC *****
;
ldw
(ndfmcr0),2010h ; ECC circuit disable
ldw
xxxx,(ndeccrd0) ; Read ECC from internal circuit
;
1’st Read:
D15-0 > LPR15:0
For first 256 bytes
ldw
xxxx,(ndeccrd1) ; Read ECC from internal circuit
;
2’nd Read:
D15-0 > FFh+CPR5:0+11b For first 256 bytes
ldw
xxxx,(ndeccrd0) ; Read ECC from internal circuit
;
3’rd Read:
D15-0 > LPR15:0
For second 256 bytes
ldw
xxxx,(ndeccrd1) ; Read ECC from internal circuit
;
4’th Read:
D15-0 > FFh+CPR5:0+11b For second 256 bytes
Writing ECC to NAND Flash
; ***** Write dummy data & ECC*****
;
ldw
(ndfmcr0),2090h ; ECC circuit disable, data write mode
ld
(ndfdtr0),xxh
; Redundancy area data write (16 times)
;
Write to D520:
LPR7:0
> D7-0 For second 256 bytes
;
Write to D521:
LPR15:8
> D7-0 For second 256 bytes
;
Write to D522:
CPR5:0+11b
> D7-0 For second 256 bytes
;
Write to D525:
LPR7:0
> D7-0 For first 256 bytes
;
Write to D526:
LPR15:8
> D7-0 For first 256 bytes
;
Write to D527:
CPR5:0+11b
> D7-0 For first 256 bytes