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8 mad bus programming, Mad bus programming, Section 3.8, “mad bus programming – Avago Technologies LSI53C895A User Manual

Page 107

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MAD Bus Programming

3-19

3.8 MAD Bus Programming

The MAD[7:0] pins, in addition to serving as the address/data bus for the
local memory interface, also are used to program power-up options for
the chip. A particular option is programmed allowing the internal
pull-down current sink to pull the pin LOW at reset or by connecting a
4.7 k

resistor between the appropriate MAD[x] pin and V

SS

. The

pull-down resistors require that HC or HCT external components are
used for the memory interface. The MAD[7:0] pins are sensed by internal
circuitry three PCI clock cycles after RST/ is deasserted.

MAD[7] – Serial EEPROM programmable option. When allowed to
be pulled LOW by the internal pull-down current sink, the automatic
data download is enabled. When pulled HIGH by an external resistor,
the automatic data download is disabled. Please see

Section 2.4,

“Serial EEPROM Interface,”

in

Chapter 2

and

Subsystem ID

and

Subsystem Vendor ID

registers in

Chapter 4

for additional

information.

MAD[6] – This signal is Reserved and may be left floating.

MAD[5] – Enables duplicate SCSI SREQ/ and SACK/ signals. When
pulled LOW by the internal pull-down current sink, the duplicate SCSI
SREQ/ and SACK/ signals are disabled. When pulled HIGH by an
external resistor, the duplicate SCSI SREQ/ and SACK/ signals are
enabled. If these duplicate signals are enabled, they must also be
terminated.

MAD[4] – Enables the alternative SSVID/SSID loading mechanism
for

Subsystem ID

and

Subsystem Vendor ID

. When allowed to be

pulled LOW by the internal pull-down current sink, the alternative
SSVID/SSID loading mechanism for the

Subsystem ID

and

Subsystem Vendor ID

is enabled. When pulled HIGH by an external

resistor, the alternative loading mechanism for the

Subsystem ID

and

Vendor ID is disabled.

For additional information, see the two topics:

Section 2.5,

“Alternative SSVID/SSID Loading Mechanism,”

and

Section 2.4,

“Serial EEPROM Interface,”

in

Chapter 2

.