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Altera DDR SDRAM High-Performance Controllers and ALTMEMPHY IP User Manual

Page 33

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Chapter 3: Parameter Settings

3–7

ALTMEMPHY Parameter Settings

June 2011

Altera Corporation

External Memory Interface Handbook Volume 3

Section I. DDR and DDR2 SDRAM Controllers with ALTMEMPHY IP User Guide

Table 3–5. DDR2 SDRAM Timing Parameter Settings

(Note 1)

(Part 1 of 2)

Parameter Name

Range

Units

Description

t

INIT

0.001–
1000

µs

Minimum memory initialization time. After reset, the
controller does not issue any commands to the memory
during this period.

t

MRD

2–39

ns

Minimum load mode register command period. The
controller waits for this period of time after issuing a load
mode register command before issuing any other
commands.

t

MRD

is specified in ns in the DDR2 SDRAM

high-performance controller and in terms of t

CK

cycles in

Micron's device datasheet. Convert t

MRD

to ns by

multiplying the number of cycles specified in the
datasheet times t

CK

, where t

CK

is the memory operation

frequency and not the memory device's t

CK

.

t

RAS

8–200

ns

Minimum active to precharge time. The controller waits
for this period of time after issuing an active command
before issuing a precharge command to the same bank.

t

RCD

4–65

ns

Minimum active to read-write time. The controller does
not issue read or write commands to a bank during this
period of time after issuing an active command.

t

RP

4–65

ns

Minimum precharge command period. The controller
does not access the bank for this period of time after
issuing a precharge command.

t

REFI

1–65534

µs

Maximum interval between refresh commands. The
controller performs regular refresh at this interval unless
user-controlled refresh is turned on.

t

RFC

14–1651

ns

Minimum autorefresh command period. The length of
time the controller waits before doing anything else after
issuing an auto-refresh command.

t

WR

4–65

ns

Minimum write recovery time. The controller waits for
this period of time after the end of a write transaction
before issuing a precharge command.

t

WTR

1–3

t

CK

Minimum write-to-read command delay. The controller
waits for this period of time after the end of a write
command before issuing a subsequent read command to
the same bank. This timing parameter is specified in clock
cycles and the value is rounded off to the next integer.

t

AC

300–750

ps

DQ output access time from CK/CK# signals.

t

DQSCK

100–750

ps

DQS output access time from CK/CK# signals.

t

DQSQ

100–500

ps

The maximum DQS to DQ skew; DQS to last DQ valid, per
group, per access.

t

DQSS

0–0.3

t

CK

Positive DQS latching edge to associated clock edge.

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