NEC PD78F9488 - Manual (Page 361)

CHAPTER 22 ELECTRICAL SPECIFICATIONS ( µ PD789488, 78F9488, 789489, 78F9489)
User’s Manual U15331EJ4V1UD
361
Flash Memory Writing and Erasing Characteristics (T
A
= 10 to 40 °C, V
DD
= 1.8 to 5.5 V)
( µPD78F9488, 78F9489 only)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Write/erase operating frequency f
X
2.7 V ≤ V
DD
≤ 5.5 V 1.0 5 MHz
1.8 V ≤ V
DD
≤ 5.5 V 1.0 1.25 MHz
Write current (V
DD
pin) Note I
DDW
When V
PP
supply voltage = V
PP1
(at 5.0 MHz operation)
7 mA
Write current (V
PP
pin) Note I
PPW
When V
PP
supply voltage = V
PP1
13 mA
Erase current (V
DD
pin) Note I
DDE
When V
PP
supply voltage = V
PP1
(at 5.0 MHz operation)
7 mA
Erase current (V
PP
pin) Note I
PPE
When V
PP
supply voltage = V
PP1
100 mA
Unit erase time t
er
0.5 1 1 s
Total erase time t
era
20 s
Number of overwrites Erase and write is considered as 1
cycle 20 Times
V
PP0
Normal operation 0 0.2V
DD
V V
PP
supply voltage
V
PP1
Flash memory programming 9.7 10.0 10.3 V
Note Excludes current flowing through ports (including on-chip pull-up resistors)