INFICON Cygnus Thin Film Deposition Controller - Manual (Page 221)

A - 7
IP
N 07
4-
37
9-
P1
K
Cygnus Operating Manual
SiO 2.130 0.870 Silicon (II) Oxide
SiO
2
2.648 1.000 Silicon Dioxide
Sm 7.540 0.890 Samarium
Sm
2
O
3
7.430 *1.000 Samarium Oxide
Sn 7.300 0.724 Tin
SnO
2
6.950 *1.000 Tin Oxide
SnS 5.080 *1.000 Tin Sulfide
SnSe 6.180 *1.000 Tin Selenide
SnTe 6.440 *1.000 Tin Telluride
Sr 2.600 *1.000 Strontium
SrF
2
4.277 0.727 Strontium Fluroide
SrO 4.990 0.517 Strontium Oxide
Ta 16.600 0.262 Tantalum
Ta
2
O
5
8.200 0.300 Tantalum (V) Oxide
TaB
2
11.150 *1.000 Tantalum Boride
TaC 13.900 *1.000 Tantalum Carbide
TaN 16.300 *1.000 Tantalum Nitride
Tb 8.270 0.660 Terbium
Tc 11.500 *1.000 Technetium
Te 6.250 0.900 Tellurium
TeO
2
5.990 0.862 Tellurium Oxide
Th 11.694 0.484 Thorium
ThF
4
6.320 *1.000 Thorium.(IV) Fluoride
ThO
2
9.860 0.284 Thorium Dioxide
ThOF
2
9.100 *1.000 Thorium Oxyfluoride
Ti 4.500 0.628 Titanium
Ti
2
0
3
4.600 *1.000 Titanium Sesquioxide
TiB
2
4.500 *1.000 Titanium Boride
TiC 4.930 *1.000 Titanium Carbide
TiN 5.430 *1.000 Titanium Nitride
TiO 4.900 *1.000 Titanium Oxide
TiO
2
4.260 0.400 Titanium (IV) Oxide
TI 11.850 1.550 Thallium
Table A-1 Material Table (continued)
Formula Density Z-Ratio Material Name