Texas Instruments TMS320C2XX - Manual (Page 229)

LACL Load Low Accumulator and Clear High Accumulator
7-76
Cycles for a Single LACL Instruction (Using Direct and Indirect Addressing)
Program
Operand ROM DARAM SARAM External
DARAM 1 1 1 1+p
SARAM 1 1 1, 2 † 1+p
External 1+d 1+d 1+d 2+d+p
† If the operand and the code are in the same SARAM block
Cycles for a Repeat (RPT) Execution of an LACL Instruction (Using Direct
and Indirect Addressing)
Program
Operand ROM DARAM SARAM External
DARAM n n n n+p
SARAM n n n, n+1 † n+p
External n+nd n+nd n+nd n+1+p+nd
† If the operand and the code are in the same SARAM block
Cycles for a Single LACL Instruction (Using Immediate Addressing)
ROM DARAM SARAM External
1 1 1 1+p
Example 1 LACL 1 ;(DP = 6: addresses 0300h–037Fh)
Before Instruction After Instruction
Data Memory Data Memory
301h 0h 301h 0h
ACC X 7FFFFFFFh ACC X 0h
C C
Example 2 LACL *–,AR4
Before Instruction After Instruction
ARP 0 ARP 4
AR0 401h AR0 400h
Data Memory Data Memory
401h 00FFh 401h 00FFh
ACC X 7FFFFFFFh ACC X 0FFh
C C
Cycles