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Data polling eeprom, Atmega169v/l – Rainbow Electronics Atmega169L User Manual

Page 281

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281

ATmega169V/L

2514A–AVR–08/02

Data Polling EEPROM

When a new byte has been written and is being programmed into EEPROM, reading the
address location being programmed will give the value 0xFF. At the time the device is
ready for a new byte, the programmed value will read correctly. This is used to deter-
mine when the next byte can be written. This will not work for the value 0xFF, but the
user should have the following in mind: As a chip-erased device contains 0xFF in all
locations, programming of addresses that are meant to contain 0xFF, can be skipped.
This does not apply if the EEPROM is re-programmed without chip erasing the device.
In this case, data polling cannot be used for the value 0xFF, and the user will have to
wait at least t

WD_EEPROM

before programming the next byte. See Table 129 for

t

WD_EEPROM

value.

Figure 128. Serial Programming Waveforms

Table 129. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location

Symbol

Minimum Wait Delay

t

WD_FLASH

4.5 ms

t

WD_EEPROM

9.0 ms

t

WD_ERASE

9.0 ms

MSB

MSB

LSB

LSB

SERIAL CLOCK INPUT

(SCK)

SERIAL DATA INPUT

(MOSI)

(MISO)

SAMPLE

SERIAL DATA OUTPUT

Table 130. Serial Programming Instruction Set

Instruction

Instruction Format

Operation

Byte 1

Byte 2

Byte 3

Byte4

Programming Enable

1010 1100

0101 0011

xxxx xxxx

xxxx xxxx

Enable Serial Programming after
RESET goes low.

Chip Erase

1010 1100

100x xxxx

xxxx xxxx

xxxx xxxx

Chip Erase EEPROM and Flash.

Read Program Memory

0010 H000

000a aaaa

bbbb bbbb

oooo oooo

Read H (high or low) data o from
Program memory at word address a:b.

Load Program Memory Page

0100 H000

000x xxxx

xxbb bbbb

iiii iiii

Write H (high or low) data i to Program
Memory page at word address b. Data
low byte must be loaded before Data
high byte is applied within the same
address.

Write Program Memory Page

0100 1100

000a aaaa

bb

xx xxxx

xxxx xxxx

Write Program Memory Page at
address a:b.

Read EEPROM Memory

1010 0000

000x xxaa

bbbb bbbb

oooo oooo

Read data o from EEPROM memory at
address a:b.