Epson Power Supply S1F70000 - Manual (Page 225)

6–2 EPSON
S1F70000 Series
Technical Manual
Appendix
Symbol Parameter
I OPR2 Stabilization circuit power dissipation
I Q Quiescent current
I R Reverse current
I SWQ Switching transistor leakage current
K I Output voltage temperature gradient
P D Power dissipation
P eff Voltage multiplication efficiency
R BSON Backup switch ON resistance
R L Load resistance
R O Output impedance
R ON ON resistance
R OSC Oscillator network resistor
R RV Stabilization voltage sensing resistor
R RVn Reference voltage
R SAT Stabilization output saturation resistance
R SWON Switching transistor ON resistance
T a Ambient temperature
t AE Minimum pulsewidth
t HA Address hold time
t HD Data hold time
THD Total harmonic distortion
θ
jn Thermal resistance
t MRR Memory reset recovery time
Symbol Parameter
C D Drain capacitance
C F8 Field slew capacitance
C G Gate capacitance
C I Input capacitance
C n Capacitance
CT Crosstalk
C Tn Temperature gradient
f CLK Clock frequency
f max Maximum clock frequency
f OSC Oscillator frequency
FT Field through (channel OFF)
I BSQ Backup switching leakage current
I DDO Operating current
I DDS Standby current
I DD Power supply current
I IH High-level input current
I IL Low-level input current
I LKI input leakage current
I MAX Maximum current
I O Output current
I OH High-level output current
I OL Low-level output current
I OPR1 Multiplier circuit power dissipation
The following figure shows a thermal design
model which can be used to determine heatsink
capacity. 2. Ensure that the regulator common pin is a sin-
gle-point ground to prevent earth loops. Make
ground lines as thick and short as possible. Use the
specified bypass capacitors for inputs and outputs.
If there is a switching load, use a tantalum or
ceramic capacitor, as these devices have a high
frequency response between the power supply and
ground.
Junction
temperature
Case
temperature
Heatsink
temperature
Ambient
temperature
Heat
source
T j
T c
T s
T a
θ
jc
θ
cs
θ
sa
PARAMETER SUMMARY