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Metrohm 789 Robotic Sample Processor XL User Manual

Page 101

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3.7 Sample racks

Metrohm Sample Processor, Operation

93

The rinsing position is used for defining the lift position at which, for

example, the electrode is to be rinsed. This means that the ideal setting

for a particular sample rack can be defined depending on the height of

the sample beakers. In a run sequence this can be programmed with

LIFT: 1: rinse mm

.

The shifting position is used for defining the lift position at which the

rack can be rotated. If the lift is located below the shift position then it

will be moved automatically to the shifting height before the rack is ro-

tated. This safety feature prevents the electrode from being damaged

by rotational movements of the rack to a large extent. However, a pre-

requirement is that this shifting height is set correctly. In a run sequence

the movement of the lift to the shift position can be programmed with

LIFT: 1 : shift mm

.

The special position is a further user-defined lift position. For example,

when pipetting with a robotic arm it can be selected so that the pipet tip

is located directly above the sample solution so that a separating bub-

ble (air gap) is formed. In a run sequence this can be programmed with

LIFT: 1 : special mm

.

The beaker radius can be used to prevent a titration head from trying

to enter a beaker which is too narrow for it, which could damage the

electrode or sample beaker. By entering the beaker radius a Sample

Processor can decide whether a titration or transfer head on the lift will

“fit” into the particular sample beaker, see also Section 3.2.

The beaker sensor recognizes whether a beaker is present. At the

moment Metrohm Sample Processors support optical infrared sensors

built into each tower of the Sample Processor. In the rack definition the

beaker sensor can be switched on (

Tower)

or off (

OFF)

.

The setting for the beaker sensor can be made individually to suit the

particular samples and the individual special beaker positions, see be-

low.

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