BECKHOFF ET1100 - Manual (Page 108)

Electrical Specifications and Timings
III-94 Slave Controller – ET1100 Hardware Description
Table 82: DC Characteristics
Symbol Parameter Condition Min Typ Max Units
V
CC Core LDO
Internal LDO output voltage
V
CC Core
/V
CC PLL
2.4 V
V
Reset I/O
Reset threshold for V
CC I/O
2.8 V
V
Reset Core
Reset threshold for V
CC Core
1.6 V
V
IL
Input Low voltage (not OSC_IN) 0.7 V
V
IH
Input High voltage (not OSC_IN) a) V
CC I/O
=3.3V
b) V
CC I/O
=5V
2.0 a) 3.6
b) 5.5 V
V
IT OSC_IN
Input threshold voltage OSC_IN
(no Schmitt trigger) a) V
CC I/O
=3.3V
b) V
CC I/O
=5V
a) 1.4
b) 2.2 a) 1.6
b) 2.5 a) 1.8
b) 2.8 V
V
OL
Output Low voltage 0.4 V
V
OH
Output High voltage 2.4 V
V
OD
LVDS differential output voltage
R
L
=100 Ω
R
BIAS
=11 k Ω
245 350 455 mV
ΔV
OD
Change in V
OD
between 1 and 0 ±50 mV
V
OC
LVDS common mode output
voltage 1.125 1.25 1.375 V
ΔV
OC
Change in V
OC
between 1 and 0 ±50 mV
V
ID
LVDS differential input voltage 100 mV
V
IC
LVDS input voltage range 0 2.4 V
I
OH
Output High current 4 mA
I
OL
Output Low current -3 mA
I
IL
Input leakage current (without
internal pull-up/pull-down
resistors) ±10 µA
I
OL
Output leakage current (tristate,
without internal PU/PD) ±10 µA
R
PU
Internal pull-up resistor 1.6 3.3 7 k Ω
R
WPU
Weak internal pull-up resistor
a) V
CC I/O
=3.3V
b) V
CC I/O
=5V
a) 75
b) 50 a) 110
b) 70 a) 190
b) 120 k Ω
R
WPD
Weak internal pull-down resistor
a) V
CC I/O
=3.3V
b) V
CC I/O
=5V
a) 60
b) 40 a) 95
b) 60 a) 180
b) 110 k Ω
R
LI+
Internal LVDS input pull-down
resistor at EBUS_RX+ pins
15 27 45
k Ω
R
LI-
Internal LVDS input pull-up
resistor at EBUS_RX- pins
15 27 45
k Ω
R
BIAS
External LVDS BIAS resistor 11 k Ω
R
L
LVDS RX load resistor 100 Ω
C
OSC
OSC_IN/OSC_OUT pin
capacitance
1.2 pF
NOTE: R
WPU
/R
WPD
cannot be used externally, their full effectiveness appears only inside the ET1100 (realized as
transistors).
NOTE: Input and output characteristics without special indication apply to all non-LVDS I/O signals.