5 oscillation characteristics, Osc1 crystal oscillation circuit, Osc3 ceramic oscillation circuit – Epson S1C63558 User Manual
Page 173
S1C63558 TECHNICAL MANUAL
EPSON
163
CHAPTER 7: ELECTRICAL CHARACTERISTICS
7.5 Oscillation Characteristics
The oscillation characteristics change depending on the conditions (components used, board pattern,
etc.). Use the following characteristics as reference values.
OSC1 crystal oscillation circuit
Item
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
Vsta
Vstp
C
D
∆
f/
∆
V
∆
f/
∆
IC
∆
f/
∆
C
G
V
hho
R
leak
Unit
V
V
pF
ppm
ppm
ppm
V
M
Ω
Max.
10
10
Typ.
14
20
Min.
2.2
2.2
-10
10
5.5
200
Condition
t
sta
≤
3sec (V
DD
)
t
stp
≤
10sec (V
DD
)
Including the parasitic capacitance inside the IC (in chip)
V
DD
=2.2 to 5.5V
C
G
=5 to 25pF
C
G
=5pF (V
DD
)
Between OSC1 and V
SS
Unless otherwise specified:
V
DD
=3.0V, V
SS
=0V, f
OSC1
=32.768kHz, C
G
=25pF, C
D
=built-in, Ta=-20 to 70
°
C
OSC3 ceramic oscillation circuit
Item
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Symbol
Vsta
t
sta
Vstp
Unit
V
ms
V
Max.
5
Typ.
Min.
2.2
2.2
Condition
(V
DD
)
V
DD
=2.2 to 5.5V
(V
DD
)
Unless otherwise specified:
V
DD
=3.0V, V
SS
=0V, Ceramic oscillator: 3.58MHz, C
GC
=C
DC
=30pF, Ta=-20 to 70
°
C