Rainbow Electronics AT89C5122 - Manual (Page 186)

186
AT8xC5122/23
4202E–SCR–06/06
Electrical Characteristics
Absolute Maximum Ratings
DC Parameters
T
A
= -40 to +85 ° C; V
SS
= 0 V, F
CK_CPU
= 0 to 24 MHz , V
CC
= 3.0V to 5.5V
Ambiant Temperature Under Bias ......................-25 ° C to 85 ° C
Storage Temperature .................................... -65 ° C to + 150 ° C
Voltage on V
CC
to V
SS
......................................-0.5 V to + 6.0V
Voltage on Any Pin to V
SS
........................-0.5 V to V
CC
+ 0.5 V
Power Dissipation 1 W
Note: Stresses at or above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions above those indicated in the operational
sections of this specification is not implied. Exposure
to absolute maximum rating conditions may affect
device reliability.
Power Dissipation value is based on the maximum
allowable die temperature and the thermal resistance
of the package.
Symbol Parameter Min Typ Max Unit Test Conditions
V
IL
Input Low Voltage -0.5 0.2 V
CC
- 0.1 V
V
IH
Input High Voltage except XTAL1, RST 0.2 V
CC
+ 0.9 V
CC
+ 0.5 V
V
IH1
Input High Voltage, XTAL1, RST 0.7 V
CC
V
CC
+ 0.5 V
V
OL
Output Low Voltage: P0, ALE, PSEN 0.45 V I
OL
= 1.6 mA
V
OH
Output High Voltage: P0, ALE, PSEN 0.9 V
CC
V I
OH
= 10 µA
V
OL1
Output Low Voltage: P2, P3, P4, P5, P1.2, P1.6,
P1.7
0.45 V I
OL
= 0.8 mA
V
OH1
Output High Voltage: P2, P3, P4, P5, P1.2, P1.6,
P1.7
0.9 V
CC
V I
OH
= -10 µA
I
IL
Logical 0 Input Current ports 2 to 5 and P1.2, P1.6,
P1.7, if Weak pull-up enabled
-50 μ A Vin = 0.45 V
I
LI
Input Leakage Current ± 10 μ A 0.45 V < V
IN
< V
CC
I
TL
Logical 1 to O transistion Current, Port 51
configuration
− 650 μ A V
IN
= 2 V
R
MEDIUM
Medium Pullup Resistor 10 k Ω
R
WEAK
Weak Pullup Resistor 100 k Ω
CIO Capacitance of I/O Buffer 10 pF
Fc = 1MHz
T
A = 25 ° C
DV
CC
Digital Supply Voltage 3 3.4 3.6 V C
L
= 470 nF
DI
CC
Digital Supply Output Current (DVcc pin) 10 mA
C
L
= 100 nF
F
CK_CPU
= 24 MHz
V
PFDP
Power Fail High Level Threshold 2.8 3 V
V
PFDM
Power Fail Low Level Threshold 2,5 2.6 V
t
rise,
t
fall
V
DD
rise and fall time 1 μ s 600 second