Rainbow Electronics W79E8213R - Manual (Page 10)

Preliminary W79E8213/W79E8213R Data Sheet
Publication Release Date: July 11, 2008
- 10 - Revision A2
7. MEMORY ORGANIZATION
The W79E8213 series separate the memory into two separate sections, the Program Memory and the
Data Memory. The Program Memory is used to store the instruction op-codes, while the Data Memory
is used to store data or for memory mapped devices.
0000H
External Data Memory Space On-Chip Code Memory Space
0000H
4K Bytes
On-Chip
Code Memory
Unused
Code Memory
Unused
Code Memory
CONFIG 0
0FFFH
1000H
FFFFH FFFFH
FC00H
CONFIG 1
FC7FH
128B
NVM
Data Memory
Unused
Data Memory
NVM Data Memory Area
(16 bytes/page)
FC1Fh
FC10h
FC0Fh
FC00h
Page 0
Page 1
Page 7
Page 2
Page 3
Page 4
Page 5
Page 6
(128B NVM, 16bytes/page)
FC3Fh
FC30h
FC2Fh
FC20h
FC5Fh
FC50h
FC4Fh
FC40h
FC7Fh
FC70h
FC6Fh
FC60h
Figure 7-1: W79E8213 series memory map
7.1 Program Memory (on-chip Flash)
The Program Memory on the W79E8213 series can be up to 4K bytes long. All instructions are
fetched for execution from this memory area. The MOVC instruction can also access this memory
region.
7.2 Data Flash Memory
The NVM Data Memory of Flash EPROM on the W79E8213 series is 128 bytes long, with page size of
16 bytes, respectively. The W79E8213 series’ NVM size is controllable through CONFIG1 register.
The W79E8213 series read the content of data memory by using “MOVC A, @A+DPTR”. To write
data is by NVMADDRL, NVMDATA and NVMCON SFR’s registers.