Rainbow Electronics T89C51CC02 - Manual (Page 17)

Rev.A - May 17, 2001 17
Preliminary
T89C51CC02
7. Program/Code Memory
7.1. Introduction
The T89C51CC02 implement 16 Kbytes of on-chip program/code memory. The FLASH memory increases EPROM
and ROM functionality by in-circuit electrical erasure and programming. Thanks to the internal charge pump, the
high voltage needed for programming or erasing FLASH cells is generated on-chip using the standard VDD voltage.
Thus, the FLASH Memory can be programmed using only one voltage and allows in application software
programming commonly known as IAP. Hardware programming mode is also available using specific programming
tool.
Figure 6. Program/Code Memory Organization
0000h
16 Kbytes
3FFFh
1
FLASH
T89C51CC02