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Absolute maximum ratings, Dc characteristics – Rainbow Electronics AT86RF401 User Manual

Page 8

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8

AT86RF401

1424D–RKE–09/02

Absolute Maximum Ratings*

Antenna Voltage (Pins 1, 20)

......................................−1V to 10V

*NOTICE:

Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only;
functional operation of the device at these or
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.

Operating Temperature

........................................−40°C to +85°C

Storage Temperature (without bias)

................−55°C to +125°C

Voltage on V

DD

with respect to ground ............................. 6.0V

Voltage on Pins 2–19 (TSSOP 20)

................ −0.1 to V

DD

+0.3V

DC Characteristics

V

DD

= 3.3V; f

XTAL

= 13.125 MHz; f

AVR

= f

XTAL

÷ 16; T

A

= 25°C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Supply

V

DD

Supply Voltage

2.0

3.3

5.0

V

I

DD

Standby Current (off)

V

DD

= 3.3V

T

A

=

25°C

0.1

0.5

µA

AVR Active

3.4

mA

Frequency Synthesizer + AVR Active

14.3

mA

Transmit (FS, AVR and Power Amp active)

CW modulation

23.2

mA

Digital Inputs (SDI, SCK, RESETB, IOx)

V

IH

High-level Input Voltage

0.8* V

DD

V

DD

V

V

IL

Low-level Input Voltage

0

0.2* V

DD

V

I

IH

High-level Input Current

V

IH

= V

DD

,

V

DD

= 5.0V

1

µA

I

IL

Low-level Input Current

V

IL

= 0V

,

V

DD

= 5.0V

−140

µA

Digital Outputs (SDO, IOx)

V

OH

High-level Output Voltage

I

OH

=

−500 µA

V

DD

−0.4

V

V

OL

Low-level Output Voltage

I

OL

= 2 mA

0.4

V

Microcontroller/System

t

TX

Time from Button Wake-up to RF Outputs Active

0.5

1.0

ms

f

AVR

AVR Clock Frequency

1.25

MHz

EE

LIFE

EEPROM Retention

Initial programming
conditions:

V

DD

= 3.3V ± 10%

Temp = 25

°C ± 10%

10

years

EE

CYCLES

EEPROM Write/Erase Endurance

2.0V

≤ V

DD

≤ 5.0V

−40°C ≤ Temp ≤
85

°C

100,000

cycles