Samsung S3F80JB - Manual (Page 317)

ELECTRICAL DATA (8MHz) S3F80JB
18-4
Table 18-2. D.C. Electrical Characteristics (Continued)
(T
A = – 25 °C to + 85 °C, V DD
= 1.95 V to 3.6 V)
Parameter Symbol Conditions Min Typ Max Unit
Supply Current
(note) I
DD1
Operating Mode
V
DD
= 3.6 V
8 MHz crystal
– 5 9
mA
I
DD2
Idle Mode
V
DD
=3.6 V
8 MHz crystal
– 1.0 2.5
Stop Mode
LVD OFF, V
DD
= 3.6 V
– 1 6 I
DD3
Stop Mode
LVD ON, V
DD
= 3.6 V
– 10 20
uA
NOTE: Supply current does not include current drawn through internal pull-up resistors or external output current loads.
Table 18-3. Characteristics of Low Voltage Detect Circuit
(T
A
= – 25 °C to + 85 °C)
Parameter Symbol Conditions Min Typ Max Unit
Hysteresis Voltage of LVD
(Slew Rate of LVD)
∆V
– – 100 300 mV
Low Level Detect Voltage
For Back-Up Mode
LVD – 1.95 2.15 2.35 V
Low Level Detect Voltage
For Flag Indicator
LVD_FLAG – 2.1 2.3 2.5 V
NOTE: The voltage gap between LVD and LVD FLAG is 150mV.
Table 18-4. Data Retention Supply Voltage in Stop Mode
(T
A
= – 25
°C to + 85 °C)
Parameter Symbol Conditions Min Typ Max Unit
Data Retention Supply
Voltage V
DDDR
–
1.5 – 3.6 V
Data Retention Supply
Current I
DDDR
V
DDDR
= 1.5 V
Stop Mode
– – 1
µA