Samsung S3F80JB - Manual (Page 307)

S3F80JB ELECTRICAL DATA (4MHz)
17-7
TYPICAL VDD-VOH(VDD=3.3V)
0.00
0.20
0.40
0.60
0.80
1.00
1.20
0 2 4 6 8 10 12
IOH(mA)
VDD
-V
O
H(
V)
TYPICAL VDD-VOH VS VDD(IOH= −2.2mA)
0
0.1
0.2
0.3
0.4
0.5
0.6
1.8V 2.3 2.8 3.3 3.8
VDD(V)
VD
D-
V
O
H(
V)
85°C
25°C
−25°C
85°C
25°C
−25°C
Figure 17-5. Typical High-Side Driver (Source) Characteristics (P3.0 and P2.0-2.3)
TYPICAL VDD-VOH(VDD=3.3V)
0.00
0.20
0.40
0.60
0.80
1.00
1.20
0 1 2 3 4 5 6
IOH(mA)
VD
D
-VO
H
(V
)
TYPICAL VDD-VOH VS VDD(IOH= −1mA)
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
1.8V 2.3 2.8 3.3 3.8
VDD(V)
VDD-VOH(V
)
85°C
25°C
−25°C
85°C
25°C
−25°C
Figure 17-6. Typical High-Side Driver (Source) Characteristics (Port0, Port1, P2.4-2.7, P3.4-P3.5 and Port4)
NOTE: Figure 17-5 and 17-6 are characterized and not tested on each device.