Samsung FLEX-MUXONENAND KFN8GH6Q4M - Manual (Page 83)

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
Erase Interleave 1) (@DDP) Flow Chart
NOTE :
1) Erase Suspend and Erase Resume Operations are not supported in Erase Interleave(@DDP).
Start
Write ‘DFS*, FBA’ of Flash
Add: F100h DQ=DFS*, FBA
Select DataRAM for DDP
Add: F101h DQ=DBS*
Write ‘Erase’ Command
Add: F220h DQ=0094h
Check for INT register high
Add: F241h DQ[15]=INT
Select DataRAM for DDP
Add: F101h DQ=DBS*
INT=1(Ready)
{
1
*
Select DataRAM for DDP
Add: F101h DQ=DBS*
Write ‘DFS*, FBA’ of Flash
Add: F100h DQ=DFS*, FBA
Write ‘Erase’ Command
Add: F220h DQ=0094h
Wait for INT register
Add: F241h DQ=[5]=EI
low to high transition
Select DataRAM for DDP
Add: F101h DQ=DBS*
Read Controller status register
Add: F240 DQ[10]=Error
{
2
*
DQ[10]=0?
NO(Erase Fail)
Erase Error
Has Final Erase
command been issued?
Select DataRAM for DDP
Add: F101h DQ=DBS*
Wait for INT register
low to high transition
Add: F241h DQ[5]=EI
Read Controller status register
Add: F240h DQ[10]=Error
YES(Erase Pass)
DQ[10]=0?
Erase completed
NO
YES
(Final Erase status check)
NO(Erase Fail)
}
3
*
YES(Erase Pass)
Previous Erase Status Check
DBS must be changed to indicate chip. Erase has been issued prior to current erase ongoing
2
*
1
*
Check the chip status before command issues.
Final Erase Status Check 3
*
* Erase Interleave can work in Auto INT Mode.
Interrupt register must not be written.