Samsung FLEX-MUXONENAND KFN8GH6Q4M - Manual (Page 11)

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
2.5 Block Diagram
2.6 Memory Array Organization
The Flex-MuxOneNAND architecture integrates several memory areas on a single chip.
2.6.1 Internal (NAND Array) Memory Organization
The on-chip internal memory is a convertible(SLC and MLC) NAND array used for data storage and code. The internal memory is divided into
a main area and a spare area.
Main Area
The main area is the primary memory array. A block incorporates 64pages(SLC) or 128pages(MLC). A main page size is 4KB and a main
page is comprised of 8 sectors each size of which is 512Byte.
Spare Area
The spare area is used for invalid block information and ECC storage. Spare area internal memory is associated with corresponding main area
memory. A spare page size is 128B and a spare page is comprised of 8 sectors each size of which is 16Byte.
BootRAM
StateMachine
Bootloader
Internal Registers
(Address/Command/Configuration
/Status Registers)
Error
Correction
Logic
DataRAM0
BufferRAM
NAND Flash
Array
OTP
(One Block)
DataRAM1
1st Block OTP
H
o
st Interf
ace
CLK
OE
WE
RP
AVD
INT/INT1
RDY
ADQ15~ADQ0
CE2
CE / CE1
(Block 0)
INT2