9 start address1 register f100h (r/w), 10 start address2 register f101h (r/w), 11~15 start address3~7 register f102h~f106h – Samsung FLEX-MUXONENAND KFN8GH6Q4M User Manual
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Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
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FLASH MEMORY
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
2.8.9 Start Address1 Register F100h (R/W)
This Read/Write register describes the NAND Flash block address which will be loaded, programmed, or erased.
F100h, default = 0000h
NOTE :
For QDP, See Section 7.4
Start Address1 Information
2.8.10 Start Address2 Register F101h (R/W)
This Read/Write register describes the method to select the BufferRAM of DDP (Device BufferRAM Select)
F101h, default = 0000h
Start Address2 Information
>DBS should be set to 1 when accessing the BufferRAM of the second chip(MSB chip) in a DDP.
>Since DDP chip has 2 BufferRAMs multiplexed, the BufferRAM which corresponds to the Flash core that is intended to be
accessed must be selected using DBS.
>Data in BufferRAM of one chip is not accessible to the Flash Core of the other chip in a DDP See Section 7.4.
2.8.11~15 Start Address3~7 Register F102h~F106h
This Register is reserved for future use.
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
DFS
Reserved(00000)
FBA
Device
Number of Block
FBA
4Gb
1024
FBA[9:0]
8Gb DDP
2048
DFS[15] & FBA[9:0]
Register Information
Description
FBA
NAND Flash Block Address
DFS
Flash Core of DDP (Device Flash Core Select)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
DBS
Reserved(000000000000000)
Register Information
Description
DBS
BufferRAM and Register of DDP (Device BufferRAM Select)