Cirrus Logic EP7309 - Manual (Page 12)

12

Copyright Cirrus Logic, Inc. 2011
(All Rights Reserved) DS507F2
EP7309
High-Performance, Low-Power System on Chip
ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
Recommended Operating Conditions
DC Characteristics
All characteristics are specified at V
DDCORE
= 2.5 V, V
DDIO
= 3.3 V and V
SS
= 0 V over an operating temperature of 0°C to +70°C
for all frequencies of operation. The current consumption figures have test conditions specified per parameter.”
DC Core, PLL, and RTC Supply Voltage 2.9 V
DC I/O Supply Voltage (Pad Ring) 3.6 V
DC Pad Input Current
10 mA/pin; 100 mA cumulative
Storage Temperature, No Power –40 C to +125C
DC core, PLL, and RTC Supply Voltage 2.5 V  0.2 V
DC I/O Supply Voltage (Pad Ring) 2.3 V - 3.5 V
DC Input / Output Voltage O–I/O supply voltage
Operating Temperature
Extended -20
C to +70C; Commercial 0C to +70C;
Industrial -40
C to +85C
Symbol Parameter Min Typ Max Unit Conditions
VIH CMOS input high voltage 0.65
V
DDIO
- V
DDIO
+ 0.3 V V
DDIO
= 2.5 V
VIL CMOS input low voltage V
SS
 0.3
- 0.25 V
DDIO
V V
DDIO
= 2.5 V
VT+
Schmitt trigger positive going
threshold
- - 2.1 V
VT-
Schmitt trigger negative going
threshold
0.8 - - V
Vhst Schmitt trigger hysteresis 0.1 - 0.4 V VIL to VIH
VOH
CMOS output high voltage
a
Output drive 1
a
Output drive 2 a
V
DD
– 0.2
2.5
2.5
-
-
- -
-
- V
V
V IOH = 0.1 mA
IOH = 4 mA
IOH = 12 mA
VOL
CMOS output low voltage a
Output drive 1 a
Output drive 2 a
-
-
- -
-
- 0.3
0.5
0.5 V
V
V IOL = –0.1 mA
IOL = –4 mA
IOL = –12 mA
IIN Input leakage current - - 1.0 µA VIN = V
DD
or GND
IOZ
Bidirectional 3-state leakage
current b c
25 - 100 µA VOUT = V
DD
or GND
CIN Input capacitance 8 - 10.0 pF
COUT Output capacitance 8 - 10.0 pF