Rainbow Electronics MAX17480 - Manual (Page 5)

MAX17480
AMD 2-/3-Output Mobile Serial
VID Controller
_______________________________________________________________________________________ 5
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 2, V
IN
= 12V, V
CC
= V
DD
= V
IN3
= SHDN = PGD_IN = 5V, V
DDIO
= 1.8V, OPTION = GNDS_ = AGND = PGND,
FBDC_ = FBAC_ = OUT3 = CSP_ = CSN_ = 1.2V, all DAC codes set to the 1.2V code, T
A
= 0°C to +85°C, unless otherwise noted.
Typical values are at T
A
= +25 °C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
FAULT DETECTION
PWM mode 250 300 350 mV
Skip mode and output
has not reached the
regulation voltage
1.80 1.85 1.90
Output Overvoltage Trip
Threshold
(SMPS1 and SMPS2 Only)
V OVP_
Measured at
FBDC_, rising
edge
Minimum OVP
threshold
0.8
V
Output Overvoltage Fault
Propagation Delay (SMPS1 and
SMPS2 Only)
t OVP FBDC_ forced 25mV above trip threshold 10 µs
Output Undervoltage Protection
Trip Threshold
V UVP
Measured at FBDC_ or OUT3 with respect
to unloaded output voltage
-450 -400 -350 mV
Output Undervoltage Fault
Propagation Delay
t UVP FBDC_ forced 25mV below trip threshold 10 µs
Lower threshold,
falling edge
(undervoltage)
-350 -300 -250
PWRGD Threshold
Measured at
FBDC_ or OUT3
with respect to
unloaded output
voltage,15mV
hysteresis (typ)
Upper threshold,
rising edge
(overvoltage)
+150 +200 +250
mV
PWRGD Propagation Delay t PWRGD
FBDC_ or OUT3 forced 25mV outside the
PWRGD trip thresholds
10 µs
PWRGD, Output Low Voltage I SINK = 4mA 0.4 V
PWRGD Leakage Current I PWRGD
High state, PWRGD forced to 5.5V,
T
A = +25°C
1 µA
PWRGD Startup Delay and
Transition Blanking Time
t BLANK
Measured from the time when FBDC_ and
OUT3 reach the target voltage
20 µs
VRHOT Trip Threshold
Measured at THRM, with respect to V CC ,
falling edge, 115mV hysteresis (typ)
29.5 30 30.5 %
VRHOT Delay t VRHOT
THRM forced 25mV below the VRHOT trip
threshold, falling edge
10 µ S
VRHOT, Output Low Voltage I SINK = 4mA 0.4 V
VRHOT Leakage Current High state, VRHOT forced to 5V, T
A = +25°C 1 µA
THRM Input Leakage T A = +25°C -100 +100 nA
Thermal-Shutdown Threshold T SHDN Hysteresis = 15°C +160 °C
GATE DRIVERS
High state (pullup) 0.9 2.5
DH_ Gate-Driver On-Resistance R ON(DH _ )
BST_ - LX_ forced
to 5V (Note 4)
Low state (pulldown) 0.7 2.5
DL_, high state 0.7 2.0
DL_ Gate-Driver On-Resistance R ON(DL _ )
DL_, low state 0.25 0.6