Samsung MUXONENAND A-DIE KFM2G16Q2A - Manual (Page 89)

MuxOneNAND2G(KFM2G16Q2A-DEBx)
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FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
3.4.3.3 Locked-tight NAND Array Write Protection State
A block that is in a locked-tight state can only be changed to locked state after a Cold or Warm Reset. Unlock and Lock command sequences
will not affect its state. This is an added level of write protection security. If any blocks are changed to locked-tight state, the all block unlock
command will fail. In order to use all block unlock command again, a cold reset is needed.
A block must first be set to a locked state before it can be changed to locked-tight using the Lock-tight command.
3.4.4 NAND Flash Array Write Protection State Diagram
*NOTE : If the 1st Block is set to be OTP, Block 0 will always be Lock Status
Lock-Tight Command Sequence:
Start block address+Lock-tight block command (002Ch)
Locked-tight
Power On
Start block address
+Unlock block Command
RP pin: High
&
Lock block Command
RP pin: High
&
+Lock-tight block Command
RP pin: High
&
Cold reset or
unlock
Lock
Lock-tight
Lock
Lock
Warm reset
Start block address
Lock
Lock
Start block address
Cold reset or
Warm reset
or
unlock
Start block address (000h)
RP pin: High
&
+All Block Unlock Command