Samsung MUXONENAND A-DIE KFM2G16Q2A - Manual (Page 170)

MuxOneNAND2G(KFM2G16Q2A-DEBx)
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FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
NOTE : 1) Refer to chapter 2.8.10 Start Address Register F101h DDP Block Diagram
~50k ohm
INT 1)
Vcc or Vccq
Rp
INT pol = ‘Low’
Busy State
Ready
VOH
tf tr
VOL Vss
Vcc
tr
,t
f
Ibus
y [mA
]
Rp(ohm)
Ibusy
tf[us]
KFN4G16Q2A @ Vcc = 1.8V, Ta = 25 °C , C
L
= 30pF
1K 10K 20K 30K
0.1059
tr[ns]
0.8088
1.284
1.598
2.976 2.919 2.916 2.915
1.76
0.18
0.09
40K 50K
1.822
1.989
2.914 2.914
0.045
0.06
0.036
Open(100K)
2.442
0.018
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