0 ac characteristics, 1 ac test conditions, 2 device capacitance – Samsung MUXONENAND A-DIE KFM2G16Q2A User Manual
Page 141: 3 valid block characteristics, 1 ac test conditions 5.2 device capacitance, Capacitance
MuxOneNAND2G(KFM2G16Q2A-DEBx)
- 141 -
FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
5.0 AC CHARACTERISTICS
5.1 AC Test Conditions
5.2 Device Capacitance
CAPACITANCE
(T
A
= 25
°C, V
CC
= 1.8V, f = 1.0MHz)
NOTE :
Capacitance is periodically sampled and not 100% tested.
5.3 Valid Block Characteristics
NOTE :
1) The
device
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with
both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
.
Do not erase or program factory-marked bad
blocks.
2) The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/512Byte ECC.
Parameter
Value (66MHz)
Value (83MHz)
Input Pulse Levels
0V to V
CC
0V to V
CC
Input Rise and Fall Times
CLK
3ns
2ns
other inputs
5ns
2ns
Input and Output Timing Levels
V
CC
/2
V
CC
/2
Output Load
C
L
= 30pF
C
L
= 30pF
Item
Symbol
Test Condition
Single
DDP
Unit
Min
Max
Min
Max
Input Capacitance
C
IN1
V
IN
=0V
-
10
-
20
pF
Control Pin Capacitance
C
IN2
V
IN
=0V
-
10
-
20
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
10
-
20
pF
INT Capacitance
C
INT
V
OUT
=0V
-
10
-
20
pF
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
Single
N
VB
2008
-
2048
Blocks
DDP
4016
-
4096
Blocks
Output Load
Device
Under
Test
* C
L
= 30pF including scope
and Jig capacitance
0V
V
CC
V
CC
/2
V
CC
/2
Input Pulse and Test Point
Input & Output
Test Point