Samsung MUXONENAND A-DIE KFM2G16Q2A - Manual (Page 128)

MuxOneNAND2G(KFM2G16Q2A-DEBx)
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FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
1st Block OTP Lock Operation Flow Chart
NOTE :
1) FBA(NAND Flash Block Address) could be omitted or any address.
2) Data input could be done anywhere between "Start" and "Write Program Command".
3) FBA should point the unlocked area address among NAND Flash Array address map.
4) ‘Write 0 to interrupt register’ step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1.
* DBS, DFS is for DDP
Start
Write ’FPA, FSA’ of Flash
Add: F107h DQ=0000h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=0801h/0C01h
Write Data into DataRAM 2)
Add: 8th Word
Write Program command
DQ=0080h or 001Ah
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Add: F220h
Write 0 to interrupt register 4)
Add: F241h DQ=0000h
Automatically
updated
DQ=XXF3h
in sector0/spare/page0
1st Block OTP lock completed
Write ’DFS, FBA’ of Flash
Add: F100h DQ=DFS, FBA 3)
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Wait for INT register
Add: F241h DQ[15]=INT
low to high transition
Write 0 to interrupt register 4)
Add: F241h DQ=0000h
Do Cold reset
Write ‘DFS’, ‘FBA’ of Flash 1)
Add: F100h DQ=DFS, FBA
Update Controller
Add: F240h
Status Register
DQ[5]=1(OTP
BL
)
(DBS and DFS must be 0)
Select DataRAM for DDP
Add: F101h DQ=DBS*