Samsung MUXONENAND A-DIE KFM2G16Q2A - Manual (Page 107)

MuxOneNAND2G(KFM2G16Q2A-DEBx)
- 107 -
FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
3.11.1 2X Program Operation
See Timing Diagram 6.13
The 2X Program is an extension of Program Operation. Since the device is equipped with two DataRAMs, and two-plane NAND Flash mem-
ory array, these two component enables simultaneous program of 4KB.
Plane1 has only even blocks such as block0, block2, block4 while Plane2 has only odd blocks such as block1, block3, block5.
In normal program, two DataRAMs can be utilized to use dual buffering scheme to enhance program performance.
In 2X program, since 4KB data is to be programmed into NAND Flash Array, dual-operation is implemented in another way;
The 2X Program and 2X Cache Program operations are only performed based on pair blocks which are consecutive.
1. 4KB Data write from host to DataRAMs.
2. 2X program command(007Dh) issue.
3. 4KB data will be trasfered to each page buffer in two-plane NAND Flash Array at the same time.
4. The data will be placed on same page of respective blocks.
If the host wants to program data under 4 sector size, unwanted area to be programmed must be written to all ‘1’s.
(BSC must be set to 00, which is 4sectors.)
Although host only set FBA(i.e. even block in Plane1) and BSA (i.e. DataRAM0) for the first page to execute this operation, the second page
data on DataRAM1 are programed onto an odd block in Plane2 at the same time.
If one of two consecutive blocks is mapped out by invalid block management, the remaining block must be used for normal program.
This 2X Program is also used for ‘Final 2X Cache Program’.
Note that 2X Program command cannot be performed on OTP block and 1st block OTP.
NOTE :
The page number of Page A and Page B is identical in different block.
If Page A is ith page of block 2j, Page B must be ith page of block 2j+1. (j=0,1,2,3...)
Page A
2) Program
2) Program
DataRAM1
1) Data Write
1) Data Write
DataRAM0
Page B
Plane1
Plane2