10 ac characteristics for int auto mode – Samsung MUXONENAND A-DIE KFM2G16Q2A User Manual
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5.9 AC Characteristics for Load/Program/Erase Performance
See Timing Diagrams 6.11, 6.12, and 6.16
NOTE :
1) These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor value.
2) Spare Load time is little bit less than Sector Load time.
3) Spare Program time is same as Sector program time.
4) 2/3 sector Load/Program time is between Sector Load/Progrma time and Page Load/Program time.
5.10 AC Characteristics for INT Auto Mode
See Timing Diagrams 6.25
5.11 AC Characteristics for Synchronous Burst Block Read
See Timing Diagrams 6.3, 6.4
Parameter
Symbol
Min
Typ
Max
Unit
Spare Load time(Note 1, Note2)
tRD1
-
23
35
µs
Sector Load time(Note 1)
Page Load time(Note 1)
tRD2
-
30
45
µs
Spare Program time(Note 1, Note3)
tPGM1
-
205
720
µs
Sector Program time(Note 1)
Page Pogram time(Note 1)
tPGM2
-
220
750
µs
OTP Access Time(Note 1)
tOTP
-
500
700
ns
Lock/Unlock/Lock-tight (Note 1)
tLOCK
-
500
700
ns
All Block Unlock Time
tABU
-
2
3
µs
Erase Suspend Time (Note 1)
tESP
-
400
500
µs
Erase Resume Time(Note 1)
1 Block
tERS1
-
1.5
2
ms
2~64 Blocks
tERS2
4
6
ms
Number of Partial Program Cycles in the page (Including main
and spare area)
NOP
-
-
4
cycles
Block Erase time (Note 1)
1 Block
tBERS1
-
1.5
2
ms
2~64 Blocks
tBERS2
-
4
6
ms
Multi Block Erase Verify Read time(Note 1)
tRD3
-
70
100
µs
Parameter
Symbol
Min
Max
Unit
Command Input to INT Low
t
WB
-
200
ns
Parameter
Symbol
Typ.
Max
Unit
INT Low Period During Synch Burst Block Read
t
INTL
1
-
us