Samsung MUXONENAND A-DIE KFM2G16Q2A User Manual
Page 149
MuxOneNAND2G(KFM2G16Q2A-DEBx)
- 149 -
FLASH MEMORY
MuxOneNAND4G(KFN4G16Q2A-DEBx)
Case 2 : BL=8 word synchronous burst block read
1st
b
u
rst
dat
a
N
th
burs
t
dat
a
S
ta
rt Pa
ge
Add
ress Settin
g
N
u
mber of
P
ages
Syn
chro
nous
Burs
t
Blo
ck Re
ad C
omma
nd
ADQ0~
CE
CLK
RDY
High
-Z
INT
bit
:
In
d
ica
to
r
fo
r Da
ta
RAM
’s
S
tat
u
s (
R
e
a
dy
=
1,
B
u
sy=0
)
RDY
:
In
d
ica
to
r fo
r L
a
te
n
cy
of
S
yn
c B
u
rs
t
Blo
ck
Re
ad
B
u
rst
Le
ngt
h:
4,
8,
16
, 32,
1K W
o
rd
Synchr
onou
s Bu
rst Blo
ck R
ead are
avai
lable.
A
1
-1 ~ A1-N:
A
ddre
ss where
e
a
ch
bu
rst da
ta
init
iat
e
s, an
d
th
is may
di
ffer f
o
r dif
ferent
se
tting
s of
B
SA and
B
L
.
N can be calculat
ed by 1024
w
/
B
L
.
The
ref
ore,
fo
r
above ca
se
, BS
A=020
0h and BL
=
8word.
So
th
at N=128
, A1-
1
=020
0h,
A
1
-2=02
08h .
..
A1-1
28=05F8h
.
WE
mu
st
be se
t hig
h
t
h
ro
ugho
ut t
he ope
rat
ion.
ADQ15
F241h
A1-1
A1-128
INT bi
t
.
.
.
..
.
.
.
.
.
.
.
.
.
.
.
.
.
WE
OE
AV
D
Hig
h
H
igh
.
.
.
.
.
.
.
.
..
.
.
.
.
..
.
.
.
.
..
.
.
.
.
..
.
.
.
.
..
.
.
DQ[15]
p
o
lli
n
g
F241h
DQ[15]
po
lli
n
g
≈
≈
≈
≈
≈
≈
≈
≈
F241h
DQ[15
] poll
in
g
.
Hig
h-
Z
Hig
h
≈