Table 5.1. adc0 electrical characteristics, Adc0 electrical characteristics, Table 5.1 – Silicon Laboratories C8051F347 User Manual
Page 56

C8051F340/1/2/3/4/5/6/7/8/9/A/B/C/D
56
Rev. 1.3
Table 5.1. ADC0 Electrical Characteristics
V
DD
= 3.0 V, VREF = 2.40 V, –40 to +85 °C unless otherwise specified
Parameter
Conditions
Min
Typ
Max
Units
DC Accuracy
Resolution
10
bits
Integral Nonlinearity
±0.5
±1
LSB
Differential Nonlinearity
Guaranteed Monotonic
±0.5
±1
LSB
Offset Error
–15
0
+15
LSB
Full Scale Error
–15
–1
+15
LSB
Offset Temperature Coefficient
10
ppm/°C
Dynamic Performance (10 kHz sine-wave Single-ended input, 1 dB below Full Scale, 200 ksps)
Signal-to-Noise Plus Distortion
51
52.5
dB
Total Harmonic Distortion
Up to the 5
th
harmonic
–67
dB
Spurious-Free Dynamic Range
78
dB
Conversion Rate
SAR Conversion Clock
3
MHz
Conversion Time in SAR Clocks
10
clocks
Track/Hold Acquisition Time
300
ns
Throughput Rate
200
ksps
Analog Inputs
ADC Input Voltage Range
Single Ended (AIN+ – GND)
Differential (AIN+ – AIN–)
0
–VREF
VREF
VREF
V
V
Absolute Pin Voltage with respect
to GND
Single Ended or Differential
0
V
DD
V
Input Capacitance
5
pF
Temperature Sensor
Linearity
1
±0.1
°C
Gain
2.86
mV/°C
Gain Error
2
±33.5
µV/ºC
Offset
1
(Temp = 0 °C)
776
mV
Offset Error
2
±8.51
mV
Power Specifications
Power Supply Current (V
DD
sup-
plied to ADC0)
Operating Mode, 200 ksps
400
900
µA
Power Supply Rejection
±0.3
mV/V
Notes:
1. Includes ADC offset, gain, and linearity variations.
2. Represents one standard deviation from the mean.