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Electrical characteristics (continued) – Rainbow Electronics T5761 User Manual

Page 31

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31

T5760/T5761

4561B–RKE–10/02

Electrical Characteristics (continued)

All parameters refer to GND, T

am b

= -40

°

C to +105

°

C, V

S

= 4.5 V to 5.5 V, f

0

= 868.3 MHz and f

0

= 915 MHz,

unless otherwise specified. (For typical values: V

S

= 5 V, T

amb

= 25

°

C)

Parameters

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Current consumption

Sleep mode
(XTO and polling logic active)

IS

off

170

276

µA

IC active (start-up-, bit-check-,
receiving mode) Pin DATA = H
FSK
ASK

IS

on

7.8
7.4

9.9
9.6

mA
mA

LNA, Mixer, Polyphase Lowpass and IF Amplifier (Input Matched According to Figure 33 Referred to RFIN)

Third-order intercept point

LNA/mixer/IF amplifier

IIP3

-16

dBm

LO spurious emission

Required according to I-ETS 300220

IS

LORF

-70

-57

dBm

System noise figure

With power matching |S11| < -10 dB

NF

5

dB

LNA_IN input impedance

at 868.3 MHz
at 915 MHz

Zi

LNA_IN

200 || 3.2
200 || 3.2

W

|| pF

W

|| pF

1 dB compression point

IP

1db

-25

dBm

Image rejection

Within the complete image band

20

30

dB

Maximum input level

BER

£

10

-3

,

FSK mode
ASK mode

P

in_max

-10
-10

dBm
dBm

Local Oscillator

Operating frequency range VCO

T5760
T5761

f

VCO

f

VCO

866
900

871
929

MHz
MHz

Phase noise local oscillator

f

osc

= 867.3 MHz at 10 MHz

L (fm)

-140

-130

dBC/Hz

Spurious of the VCO

at ±f

XTO

-55

-45

dBC

XTO pulling

XTO pulling,
appropriate load capacitance must
be connected to XTAL,
crystal C

M

= 7 fF

f

XTAL

= 6.77617 MHz (EU)

f

XTAL

= 7.14063 MHz (US)

f

XTO

-30ppm

f

XTAL

+30ppm

MHz

Series resonance resistor of the
crystal

Parameter of the supplied crystal

R

S

120

W

Static capacitance at Pin XTAL to
GND

Parameter of the supplied crystal
and board parasitics

C

0

6.5

pF

Analog Signal Processing (Input Matched According to Figure 33 Referred to RFIN)

Input sensitivity ASK

ASK (level of carrier)
BER

£

10

-3

, 100% Mod

f

in

= 868.3 MHz/915 MHz

V

S

= 5 V, T

amb

= 25

°

C

f

IF

= 950 kHz/1 MHz

P

Ref_ASK

BR_Range0

-110

-112

-114

dBm

BR_Range1

-108.5

-110.5

-112.5

dBm

BR_Range2

-108

-110

-112

dBm

BR_Range3

-106

-108

-110

dBm