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High-voltage serial programming algorithm, Attiny15l – Rainbow Electronics ATtiny15L User Manual

Page 56

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56

ATtiny15L

1187E–AVR–06/02

High-voltage Serial
Programming Algorithm

To program and verify the ATtiny15L in the High-voltage Serial Programming mode, the
following sequence is recommended (See instruction formats in Table 25):

1.

Power-up sequence:
Apply 4.5 - 5.5V between V

CC

and GND. Set PB5 and PB0 to “0” and wait at

least 30 µs.
Set PB3 to “0”. Wait at least 100 ns.
Apply 12V to PB5 and wait at least 100 ns before changing PB0. Wait 8 µs
before giving any instructions.

2.

The Flash array is programmed one byte at a time by supplying first the address,
then the low and high data byte. The write instruction is self-timed; wait until the
PB2 (RDY/BSY) pin goes high.

3.

The EEPROM array is programmed one byte at a time by supplying first the
address, then the data byte. The write instruction is self-timed; wait until the PB2
(RDY/BSY) pin goes high.

4.

Any memory location can be verified by using the Read instruction, which returns
the contents at the selected address at serial output PB2.

5.

Power-off sequence:
Set PB3 to “0”.
Set PB5 to “0”.
Turn V

CC

power off.

When writing or reading serial data to the ATtiny15L, data is clocked on the eigth rising
edge of the 16 external clock pulses needed to generate the internal clock. See Figure
31, Figure 32,
and Table 26 for an explanation.

Figure 31. High-voltage Serial Programming Waveforms

MSB

MSB

MSB

LSB

LSB

LSB

0

1

2

3

4

5

6

7

8

9

10

SERIAL DATA INPUT

PB0

SERIAL INSTR. INPUT

PB1

SERIAL DATA OUTPUT

PB2

INTERNAL CK

SERIAL CLOCK INPUT

PB3

16x