3gpp lte-fdd distortion performance – Atec Agilent-N5181B-N5182B User Manual
Page 25
25
3GPP LTE-FDD distortion performance
1
Standard
Option UNV
Option UNV
with Option 1EA
Power level
≤ 2 dBm
2
≤ 2 dBm
2
≤ 5 dBm
2
Offset
Configuration
Frequency
Spec
Typ
Spec
Typ
Spec
Typ
Adjacent (10 MHz)
3
10 MHz E-TM 1 .1
QPSK
1800 to 2200 MHz
–64 dBc
–66 dBc
–67 dBc
–69 dBc
–64 dBc
–67 dBc
Alternate (20 MHz)
3
–66 dBc
–68 dBc
–69 dBc
–71 dBc
–69 dBc
–71 dBc
1. ACPR specifications apply when the instrument is maintained within ± 20 to 30 °C.
2. This is rms power. Convert from rms to peak envelope power with the following equation: PEP = rms power + crest factor
(for example, 3GPP test model 1 with 64 DPCH has a crest factor 11.5 dB, therefore at +5 dBm rms, the PEP = 5 dBm + 11.5 dB = +16.5 dBm PEP).
3. ACPR measurement configuration: reference channel integration BW: 9.015 MHz, offset channel integration bandwidth: 9.015 MHz.
-78
-76
-74
-72
-70
-68
-66
-64
-62
-60
-10
-5
0
5
10
AC
LR
(d
Bc
)
Power level (dBm)
Measured 10 MHz LTE E-TM 1.1 QPSK ACLR
(with Option UNV + 1EA)
LTE-Offset 1 (10 MHz)
LTE-Offset 2 (20 MHz)
-78
-76
-74
-72
-70
-66
-68
-10
-5
0
5
10
ACL
R
(d
Bc
)
Power level (dBm)
Measured single carrier 3GPP W-CDMA ACLR TM1
(with Option UNV + 1EA)
64 DPCH
1 DPCH
-72
-70
-68
-66
-64
-62
-60
-10
-5
0
5
10
ACL
R
(d
Bc
)
Power level (dBm)
Measured 4 carrier 3GPP W-CDMA ACLR TM1 64 DPCH
(with Option UNV +1EA)