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3gpp lte-fdd distortion performance – Atec Agilent-N5181B-N5182B User Manual

Page 25

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25

3GPP LTE-FDD distortion performance

1

Standard

Option UNV

Option UNV

with Option 1EA

Power level

≤ 2 dBm

2

≤ 2 dBm

2

≤ 5 dBm

2

Offset

Configuration

Frequency

Spec

Typ

Spec

Typ

Spec

Typ

Adjacent (10 MHz)

3

10 MHz E-TM 1 .1

QPSK

1800 to 2200 MHz

–64 dBc

–66 dBc

–67 dBc

–69 dBc

–64 dBc

–67 dBc

Alternate (20 MHz)

3

–66 dBc

–68 dBc

–69 dBc

–71 dBc

–69 dBc

–71 dBc

1. ACPR specifications apply when the instrument is maintained within ± 20 to 30 °C.
2. This is rms power. Convert from rms to peak envelope power with the following equation: PEP = rms power + crest factor

(for example, 3GPP test model 1 with 64 DPCH has a crest factor 11.5 dB, therefore at +5 dBm rms, the PEP = 5 dBm + 11.5 dB = +16.5 dBm PEP).

3. ACPR measurement configuration: reference channel integration BW: 9.015 MHz, offset channel integration bandwidth: 9.015 MHz.

-78

-76

-74

-72

-70

-68

-66

-64

-62

-60

-10

-5

0

5

10

AC

LR

(d

Bc

)

Power level (dBm)

Measured 10 MHz LTE E-TM 1.1 QPSK ACLR

(with Option UNV + 1EA)

LTE-Offset 1 (10 MHz)

LTE-Offset 2 (20 MHz)

-78

-76

-74

-72

-70

-66

-68

-10

-5

0

5

10

ACL

R

(d

Bc

)

Power level (dBm)

Measured single carrier 3GPP W-CDMA ACLR TM1

(with Option UNV + 1EA)

64 DPCH
1 DPCH

-72

-70

-68

-66

-64

-62

-60

-10

-5

0

5

10

ACL

R

(d

Bc

)

Power level (dBm)

Measured 4 carrier 3GPP W-CDMA ACLR TM1 64 DPCH

(with Option UNV +1EA)