Rainbow Electronics AT45DB161E User Manual
Features

8782D–DFLASH–11/2012
Features
Single 2.3V - 3.6V or 2.5V - 3.6V supply
Serial Peripheral Interface (SPI) compatible
Supports SPI modes 0 and 3
Supports RapidS
™
operation
Continuous read capability through entire array
Up to 85MHz
Low-power read option up to 10MHz
Clock-to-output time (t
V
) of 6ns maximum
User configurable page size
512 bytes per page
528 bytes per page (default)
Page size can be factory pre-configured for 512 bytes
Two fully independent SRAM data buffers (512/528 bytes)
Allows receiving data while reprogramming the main memory array
Flexible programming options
Byte/Page Program (1 to 512/528 bytes) directly into main memory
Buffer Write
Buffer to Main Memory Page Program
Flexible erase options
Page Erase (512/528 bytes)
Block Erase (4KB)
Sector Erase (128KB)
Chip Erase (16-Mbits)
Program and Erase Suspend/Resume
Advanced hardware and software data protection features
Individual sector protection
Individual sector lockdown to make any sector permanently read-only
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique identifier
64 bytes user programmable
Hardware and software controlled reset options
JEDEC Standard Manufacturer and Device ID Read
Low-power dissipation
500nA Ultra-Deep Power-Down current (typical)
3μA Deep Power-Down current (typical)
25μA Standby current (typical at 20MHz)
11mA Active Read current (typical)
Endurance: 100,000 program/erase cycles per page minimum
Data retention: 20 years
Complies with full industrial temperature range
Green (Pb/Halide-free/RoHS compliant) packaging options
8-lead SOIC (0.150" wide and 0.208" wide)
8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
9-ball Ultra-thin UBGA (6 x 6 x 0.6mm)
AT45DB161E
16-Mbit DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum
SPI Serial Flash Memory
DATASHEET
Document Outline
- Features
- Description
- 1. Pin Configurations and Pinouts
- 2. Block Diagram
- 3. Memory Array
- 4. Device Operation
- 5. Read Commands
- 5.1 Continuous Array Read (Legacy Command: E8h Opcode)
- 5.2 Continuous Array Read (High Frequency Mode: 1Bh Opcode)
- 5.3 Continuous Array Read (High Frequency Mode: 0Bh Opcode)
- 5.4 Continuous Array Read (Low Frequency Mode: 03h Opcode)
- 5.5 Continuous Array Read (Low Power Mode: 01h Opcode)
- 5.6 Main Memory Page Read
- 5.7 Buffer Read
- 6. Program and Erase Commands
- 6.1 Buffer Write
- 6.2 Buffer to Main Memory Page Program with Built-In Erase
- 6.3 Buffer to Main Memory Page Program without Built-In Erase
- 6.4 Main Memory Page Program through Buffer with Built-In Erase
- 6.5 Main Memory Byte/Page Program through Buffer 1 without Built-In Erase
- 6.6 Page Erase
- 6.7 Block Erase
- 6.8 Sector Erase
- 6.9 Chip Erase
- 6.10 Program/Erase Suspend
- 6.11 Program/Erase Resume
- 7. Sector Protection
- 8. Security Features
- 9. Additional Commands
- 10. Deep Power-Down
- 11. Buffer and Page Size Configuration
- 12. Manufacturer and Device ID Read
- 13. Software Reset
- 14. Operation Mode Summary
- 15. Command Tables
- 16. Power-On/Reset State
- 17. System Considerations
- 18. Electrical Specifications
- 19. Input Test Waveforms and Measurement Levels
- 20. Output Test Load
- 21. Utilizing the RapidS Function
- 22. AC Waveforms
- 23. Write Operations
- 24. Read Operations
- 25. Detailed Bit-level Read Waveforms: RapidS Mode 0/Mode 3
- 26. Auto Page Rewrite Flowchart
- 27. Ordering Information
- 28. Packaging Information
- 29. Revision History